Minjoo Larry Lee

Associate Professor of Electrical Engineering
Room / Office: Becton 513
Office Address:
15 Prospect Street
New Haven, CT 06511
Mailing Address:
P.O. Box 208284
New Haven, CT 06520
Phone: (203) 432-4298
Fax: (203) 432-6420
Email: minjoo.lee@yale.edu
Degrees:
  • Ph.D., Massachusetts Institute of Technology
  • Sc.B., Brown University

Interests:

The Lee Group at Yale works at the intersection between electrical engineering and materials science. We are currently investigating the following areas:

Device themes- solar cells, light emitters (LEDs and laser diodes) from visible to mid-infrared, optoelectronic integration on Si

Materials themes- molecular beam epitaxy, lattice-mismatched/metamorphic growth, self-assembled quantum dots, III-V on Si growth

Selected Awards & Honors:

  • 5 best presentation prizes to advisees at IEEE Photovoltaic Specialists Conference, Materials Research Society Fall Meeting, Electronic Materials Conference, and North American conference on Molecular Beam Epitaxy (2010-2013)
  • NAMBE Young Investigator Award (2012)
  • Lange Lecturer in Materials for “Outstanding contributions to strain engineered semiconductor materials”, UC Santa Barbara, (2012)
  • DARPA Young Faculty Award (2011)
  • NSF CAREER Award (2010)
  • ScienceWatch Fast Moving Fronts featured paper (2010)
  • George E. Smith Best Paper Award, IEEE Electron Device Society (2005) 
  • Gold Award, Materials Research Society Spring Meeting (2003) 

Selected Publications:

Selected Patents:

  • "Tensile strained Ge for electronic and optoelectronic applications", 8,063,413: Bai, Yu; (Cambridge, MA), Lee, Minjoo L.; (Hamden, CT), Fitzgerald, Eugene A.; (Windham, NH)
  • "Structure and method for a high-speed semiconductor device having a Ge channel layer", 7,301,180, 2007: Lee, Minjoo L. (Hamden, CT); Leitz, Christopher W. (Nashua, NH); Fitzgerald, Eugene A. (Windham, NH)
  • "Method for improving hole mobility enhancement in strained silicon p-type MOSFETS", 7,005,668, 2006: Lee, Minjoo L.; (Cambridge, MA) ; Fitzgerald, Eugene A.; (Windham, NH)
  • "Structures with planar strained layers", 7,141,820, 2006: Lee, Minjoo L.; (Cambridge, MA) ; Leitz, Christopher W.; (Nashua, NH) ; Fitzgerald, Eugene A.; (Windham, NH) (10-year licensing agreement with Intel corporation)
  • "Enhancement of p-type metal-oxide-semiconductor field effect transistors", 6,916,727, 2005: Leitz, Christopher W.; (Nashua, NH) ; Lee, Minjoo L.; (Cambridge, MA) ; Fitzgerald, Eugene A.; (Windham, NH) (10-year licensing agreement with Intel corporation)
  • "Formation of planar strained layers", 6,730,551, 2004: Lee, Minjoo L.; (Cambridge, MA) ; Leitz, Christopher W.; (Nashua, NH) ; Fitzgerald, Eugene A.; (Windham, NH) (10-year licensing agreement with Intel corporation)