Charles Ahn

Charles Ahn

Website:

Ahn Lab
William K. Lanman Jr. Professor of Applied Physics, Mechanical Engineering & Materials Science, & Physics
Room / Office: Becton 301
Office Address:
15 Prospect Street
New Haven, CT 06511
Mailing Address:
P.O. Box 208284
New Haven, CT 06520
Phone: (203) 432-6421
Fax: (203) 432-4283
Email: charles.ahn@yale.edu
Degrees:
  • Ph.D., Stanford University

Interests:

The Ahn research group focuses on the fabrication and the study of the physical properties of novel complex oxide materials using advanced growth and characterization techniques, including molecular beam epitaxy and synchrotron x-ray scattering techniques. Current interests include the physics and technology of multifunctional oxides, nanofabrication and electronic writing using scanning probe microscopies, electronic control of complex order parameters in correlated oxides, and development of nonvolatile logic switches for post-CMOS computing paradigms.

Selected Awards & Honors:

  • Fellow of the American Physical Society
  • AVS Peter Mark Memorial Award
  • David and Lucile Packard Fellowship in Science and Engineering
  • Alfred P. Sloan Fellowship

Selected Publications:

  • A. Disa, D. Kumah, A. Malashevich, H. Chen, D. Arena, E. Specht, S. Ismail-Beigi, F. J. Walker, and C. H. Ahn, Orbital engineering in symmetry-breaking polar heterostructures. Physical Review Letters, 114, 026801, 2015. DOI: 10.1103/PhysRevLett.114.026801
  • I. Bozovic, and C. H. Ahn, A new frontier for superconductivity. Nature Physics, 10, 892, 2014. DOI: 10.1038/nphys3177 
  • M. G. Han, M. Marshall, L. Wu, M. Schofield, T. Aoki, R. Twesten, J. Hoffman, F. J. Walker, C. H. Ahn, and Y. Zhu, Interface-induced nonswitchable domains in ferroelectric thin films. Nature Communications 5, 4693. 2014. DOI: 10.1038/ncomms5693 
  • D. Kumah, A. Disa, J. Ngai, H. Chen, A. Malashevich, J. W. Reiner, S. Ismail-Beigi, F. J. Walker, and C. H. Ahn, Tuning the structure of nickelates to achieve two-dimensional electron conduction. Advanced Materials, 26, 1935, 2014. DOI: 10.1002/adma.2013042562014 
  • H. Chen, Q. Qiao, M. Marshall, A. Georgescu, A. Gulec, P. Phillips, R. Klie, F. J. Walker, C. H. Ahn, and S. Ismail-Beigi, Reversible Modulation of Orbital Occupations via an Interface-Induced Polar State in Metallic Manganites. Nano Letters, 14(9), 4965, 2014. DOI: 10.1021/nl501209p 
  • C. Xiong, W. Pernice, J. Ngai, J. W. Reiner, D. Kumah, F. J. Walker, C. H. Ahn, and H. Tang, Active silicon integrated nanophotonics: ferroelectric BaTiO3 devices. Nano Letters, 14(3), 1419, 2014. DOI: 10.1021/nl404513p 
  • J. Ngai, F. Walker and C. Ahn, Correlated Oxide Physics and Electronics. Annual Review of Materials Research, 44, 1, 2014. DOI: 10.1146/annurev‐matsci‐070813‐113248 
  • H. Chen, D. Kumah, A. Disa, F. J. Walker, C. H. Ahn, and S. Ismail-Beigi, Modifying the Electronic Orbitals of Nickelate Heterostructures via Structural Distortions. Physical Review Letters 110(18), 186402, 2013. DOI: 10.1103/PhysRevLett.110186402

Responsibilities:

William K. Lanman Jr. Professor of Applied Physics
Professor of Mechanical Engineering & Materials Science
Professor of Physics
Chair, Department of Applied Physics
Director, Center for Research on Interface Structures and Phenomena, an NSF Materials Research Science and Engineering Center