Fengnian Xia

Barton L. Weller Associate Professor in Engineering and Science
Room / Office: Becton 519
Office Address:
15 Prospect Street
New Haven, CT 06511
Mailing Address:
P.O. Box 208284
New Haven, CT 06520
Phone: (203) 432-7271
Email: fengnian.xia@yale.edu
Degrees:
  • Ph.D., Princeton University
  • B.S., Tsinghua University, China

Interests:

Light-matter interaction and photonic devices; carrier transport and electronic devices; device applications in imaging, communications, and electronics; integration of emerging and traditional materials.

Selected Awards & Honors:

  • 2018: Highly Cited Researcher, Clarivate Analytics
  • 2017: Highly Cited Researcher, Clarivate Analytics
  • 2016: National Science Foundation CAREER Award
  • 2015: Barton L. Weller Endowed Junior Chair, Yale University
  • 2015: Office of Naval Research Young Investigator Program Awardee
  • 2012: IBM Corporate Award (the highest technical award by the CEO)
  • 2011: TR35, MIT Technology Review’s Top Young Innovator under 35
  • 1998: Graduation with Highest Honor, Tsinghua University, Beijing, China

Selected Publications:

Selected Patents:

  • 8,395,103: Avalanche impact ionization amplification devices 
  • 8,378,465: Method and apparatus for optical modulation 
  • 8,232,516: Avalanche impact ionization amplification devices 
  • 8,139,904: Method and apparatus for implementing optical deflection switching using coupled resonators 
  • 8,053,782: Single and few-layer graphene based photodetecting devices 
  • 7,999,344: Optoelectronic device with germanium photodetector 
  • 7,880,201: Optical modulator using a serpentine dielectric layer between silicon layers 
  • 7,790,495: Optoelectronic device with germanium photodetector 
  • 7,684,666: Method and apparatus for tuning an optical delay line 
  • 7,515,793: Waveguide photodetector 
  • 7,373,048: Polarization insensitive semiconductor optical amplifier 
  • 7,333,689: Photonic integrated devices having reduced absorption loss 
  • 6,795,622: Photonic integrated circuits