In situ growth studies of group V 2D materials

Yale Electrical Engineering Seminar

Matthieu Fortin-Deschênes
Polytechnique Montréal, Canada

In situ growth studies of group V 2D materials

Abstract: Group V 2D materials are new class of materials which include various allotropes of phosphorus, arsenic, antimony and bismuth. Amongst them we find the well-known black phosphorus, a semiconductor with a thickness dependent direct band gap, high charge carrier mobilities and anisotropic transport properties, as well as antimonene, which is predicted to exhibit a variety of topological phases in few-layers form and a semiconducting single layer phase. One of the biggest challenges hindering the integration of these materials in novel technologies is the lack of controlled large-scale synthesis methods and the limited understanding of their growth mechanisms.

Here, I will discuss the current status and challenges related to the synthesis of group V 2D materials and present our results on the molecular beam epitaxial growth of antimonene on germanium. Then I will discuss the influence of the growth substrate on the electronic properties of epitaxial group V 2D materials and highlight the importance of weakly interacting substrates. Finally, I will present in situ low-energy electron microscopy (LEEM) studies of the van der Waals growth dynamics of antimonene on graphene. Using real-time LEEM imaging of the growth dynamics we were able to determine the mechanisms governing the nucleation and growth of antimonene on graphene and identify key processes which trigger the transition from a lateral to a vertical growth mode.

Host: Fengnian Xia (Electrical Engineering)

Monday – August 12, 2019
11 am to noon
Mann Engineering Student Center
10 Hillhouse Avenue