Tso-Ping Ma

Raymond John Wean Professor of Electrical Engineering & Applied Physics
Room / Office: Becton 319
Office Address:
15 Prospect Street
New Haven, CT 06511
Mailing Address:
P.O. Box 208284
New Haven, CT 06520
Phone: (203) 432-4211
Email: t.ma@yale.edu
Degrees:

Ph.D., Yale University

Interests:

Ma's research group revolves around the scientific and technological issues related to semiconductor devices, especially those involving science and engineering of futuristic CMOS (Complimentary Metal-Oxide-Semiconductor) technology for logic and memory applications. It overlaps a number of areas in materials synthesis, device physics, device engineering, and integrated circuits. Professor Ma and most of his graduate students and research staff members collaborate closely with a number of universities and major semiconductor companies in the United States and abroad.

Prof. Ma's current research projects include

  • Advanced Gate Dielectrics for Beyond-Si Transistors
  • Versatile Ferroelectric Memory and logic Technologies
  • Unipolar CMOS Technology for High-mobility Semiconductors and Thin-film Transistors, Including Emerging 2-D Channels
  • Field-Effect Devices Based on InGaAs, GaN, Ge, SiGe, and Emerging 2-D Channels
  • Ionizing Radiation Effects in Emerging CMOS and 2-D Transistors

Selected Awards & Honors:

  • Honorary Doctor's degree, the National Chiao Tung University, Taiwan, ROC, March 2016
  • Outstanding Alumnus Award of the National Taiwan University Department of Electrical Engineering, November, 2015
  • Distinguished Achievement Award, Chinese Institute of Engineers – USA, Greater New York Chapter, October 2015
  • YSEA (Yale Science and Engineering Association) Award for Advancement of Basic and Applied Science, 2015
  • National Taiwan University Outstanding Alumnus Award (2014)
  • Elected to 3 National Academies:
  • U.S. National Academy of Engineering (NAE) (2003)
  • Chinese Academy of Science as a Foreign Member(中科院外籍院士) (2009)
  • Academia Sinica of Taiwan, ROC (臺灣中央研究院院士), (2012)
  • Connecticut Medal of Technology (2008)
  • SIA University Researcher's Award (2006)
  • IEEE Andrew S. Grove Award (2005)
  • Pan Wen-Yuan Award (2005)
  • B.F. Goodrich National Collegiate Inventor's Advisor Award (1998)
  • Paul Rappaport Award, IEEE Electron Device Society (1998)
  • B.F. Goodrich National Collegiate Inventor's Advisor Award (1993)
  • Connecticut Yankee Ingenuity Award (1991)
  • Harding Bliss Prize, Yale University (1975)
  • Life Fellow of the Institute of Electrical and Electronic Engineers (IEEE)
  • Honorary Professor of Chinese Academy of Sciences
  • Honorary Professor of Tianjin University
  • Honorary Professor of Tsinghua University
  • Honorary Professor of National Chiao Tung University
  • Honorary Guest Professor of Peking University
  • Advisory Professor of Fudan University

Selected Publications:

  • Nanbo Gong and T.P. Ma, “A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation”, IEEE Electron Device Letters vol. 39 (1) 15-18 (2018)
  • M.A. Bhuiyan, H. Zhou, S.J. Chang, X. Lou, X. Gong, R. Jiang, H. Gong, E. X. Zhang, C.H. Won, J.-W. Lim, J.H. Lee, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye, and T.P. Ma, “Total Ionizing Dose Responses of GaN-based HEMTs with Different Channel Thicknesses and MOSHEMTs with Epitaxial MgCaO as Gate Dielectric”, IEEE Transactions on Nuclear Science, Vol. 65, Issue: 1, pp.46-52 (2018)
  • Shufeng Ren, Maruf A Bhuiyan, Jingyun Zhang, Xiabing Lou, Mengwei Si, Xian Gong, Rong Jiang, Kai Ni, Xin Wan, En Xia Zhang, Roy G Gordon, Robert A Reed, Daniel M Fleetwood, Peide Ye, TP Ma, ” Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics”, IEEE Transactions on Nuclear Science, 64(1), 164-169 (2017)
  • Nanbo Gong and T.P. Ma, “Why is Retention Time for HfO2-based Ferroelectric Longer than Those for PZT or SBT in 1-T Memory Cell?”, IEEE Electron Device Letters, Vol 37(9), pp.1123-6 (2016)
  • Xiao Sun and T.P. Ma, “Electrical Characterization of Nanoscale Transistors —with an Emphasis on Traps Associated with the MOS Gate Stacks”, book chapter for "Characterization and Metrology for Nanoelectronics and Nanostructures", edited by Zhiyong Ma and Dave Seller, June (2015).
  • Jie Yang, Sharon Cui, T.P. Ma, Ting-Hsiang Hung, Digbijoy Nath,, Sriram Krishnamoorthy, and Siddharth Rajan, “A Study of Electrically Active Traps in AlGaN/GaN HEMT”, Appl. Phys. Lett. 103, 173520 (2013)
  • X Sun, S Cui, A Alian, G Brammertz, C Merckling, D Lin, and TP Ma, "AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact", Electron Device Letters, IEEE 33 (3), 438-440 (2012)
  • T.P. Ma, “Unipolar CMOS Logic for Post-Si ULSI and TFT Technologies”, ECS Trans. 37(1), pp. 207-215 (2011)
  • T.P. Ma, “Inelastic Electron Tunneling Spectroscopy (IETS) Study of Ultra-Thin Gate Dielectrics for Advanced CMOS Technology”. ECS Trans. 35 (4), 545 (2011)
  • Ionizing Radiation Effects in MOS Devices & Circuits, (John Wiley & Sons), 1989.

Selected Patents:

  • "A Ferroelectric Dynamic Random Access Memory", US Patent #6,067,244, 2000: With Jin-Ping Han.
  • "Isotopically Enriched Semiconductor Devices", 5442,191, 1995.
  • "Complementary Metal Oxide Semiconductor Devices", U.S. Patent No. 8,384,156, Feb. 26, 2013: With Larry Minjoo Lee, and Xiao Sun.
  • "Unipolar CMOS Circuits with a Novel Bootstrapping Circuit Block", Provisional Patent, 2014: With Xiao Sun.
  • "Circuitry for Ferroelectric FET-based Dynamic Random Access Memory and Non-volatile Memory", Provisional Patent, 2014: With Xiao Sun.
  • "Three Dimensional Structures of Ferroelectric FET Memory Arrays, and Their Operation and Fabrication Methods", Provisional Patent, 2014: With Xiao Sun.

Selected Plenary/Keynote Speeches:

  • T.P. Ma, "From Stone Age to Modern Microelectronics ", Keynote Speech at the Chinese Association for Science and Technology, USA (CAST-BOSTON) Annual Convention, Boston, MA, Dec 2, (2017)
  • T.P. Ma, "How Does Liberal Arts Education Cultivate Leaders – The Yale Experience", Third international Liberal Arts Education Conference (LAEC), Fudan University, Shanghai, China., Apr 15-16, (2017)
  • T.P. Ma, "Ferroelectric 1-T Memory Technology: A Great Opportunity for China to Take a Leadership Role", Plenary talk at the International Memory Summit, Wuhan, China, March 28, (2016)
  • T.P. Ma, "From Stone Age to Nanoelectronics", Keynote Speech delivered at the (CAPA) Chinese American Professors Association –CT, October 22 (2016)
  • T.P. Ma, "Versatile Memory: A Software Configurable Memory Technology Based on Ferroelectric FETs", Plenary Talk at the 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2016, Hangzhou, China) Oct. 25 - 28th, (2016)
  • T.P. Ma, "Microelectronics/Nanoelectronics: Past. Present, and Future; as well as Investment Opportunities", Plenary Speech at the Annual Convention of the Chinese Association for Science and Technology, USA, Columbia University, May 2 (2015).
  • T.P. Ma, "From Transistors, Integrated Circuits, to Nanoelectronics: Past, Present, and Future', Plenary talk at the Annual Convention of the Chinese Institute of Engineers – USA Greater New York Chapter, New York, NY 10-17, (2015)
  • T.P. Ma, "FEDRAM: A Capacitor-less DRAM Based on Ferroelectric-Gated Field-Effect Transistor", Keynote Speech, International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 2015, Lake Tahoe, CA, June 14-18, (2015)
  • T.P. Ma, "FEDRAM: A Capacitor-less DRAM Based on Ferroelectric-Gated Field-Effect Transistor", Keynote Speech, 2014 IEEE International Memory Workshop (IMW), Taipei, Taiwan, May 18-21 (2014)
  • T.P. Ma, "Opportunities and Challenges of Beyond-Si CMOS Technologies Based on High Mobility Channels" Keynote Speech at 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2014), Chengdu, China ,June 18-20, (2014)
  • T.P. Ma, "Beyond-Si CMOS Technologies Based on High-Mobility Channels", Plenary Speech delivered at the IEEE Device Research Conference, South Bend Indiana, June 23-26 (2013)
  • T.P. Ma, "Novel Electrical Characterization Techniques for Reliability Study of Advanced CMOS Gate Dielectrics", Plenary Speech, delivered at the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China, July 17-19 (2013)
  • T.P. Ma, "Beyond-Si CMOS Technologies Based on High-Mobility Channels Plenary Speech delivered at the 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Grenoble, France, July 8-11, (2013)
  • T.P. Ma, "IC Technology: Past, Present, and Future", Keynote speech delivered at the 16th General Assembly of the Chinese Academy of Sciences, Beijing, China, June 14, (2012)
  • T.P. Ma and Xiao Sun, "Unipolar CMOS Logic for Post-Si ULSI and TFT Technologies", Keynote speech, 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT), Hong Kong, China, June 27-29, (2011)
  • T.P. Ma, "The Evolution of IC Technology and Its Future Outlook in China", Keynote speech delivered at the 13th Annual Meeting of the Chinese Association for Science and Technology, Tianjin, China, September 21-23 (2011)