Semiconductor Materials and Devices Beyond Silicon
Department of Mechanical Engineering & Materials Science Fall Seminar Series
"Semiconductor Materials and Devices Beyond Silicon"
Siddharth Rajan
Professor of Electrical and Computer Engineering and Materials Science and Engineering
The Ohio State University
Abstract: Developments in silicon electronics and memory have been at the center of the information revolution over the past few decades. The next revolution in electronics is happening through new semiconductor materials for functionality and performance that far exceed conventional silicon circuits. Wide band gap semiconductor materials have emerged as an exciting area of research due to their unique electronic, optical, and mechanical properties, and because they can create solutions to key technological problems in communications, energy efficiency, sensing, and several other areas.
In the first part of my presentation, I will discuss wide band gap electronic devices, where we use extremely high electric breakdown fields to realize power electronics for energy systems, and high frequency electronics for high data rate communications. I will discuss our work on using novel semiconductor heterostructures to realize next-generation wide band gap transistors, including ultra-wide band gap AlGaN transistors for mm-wave electronics, Gallium Oxide (Ga2O3) heterostructure devices, and novel transistors based on complex oxides such as SrTiO3 and BaTiO3. The second part of the presentation will discuss Gallium Nitride-based solid state visible and ultra-violet light emitters. I will describe recent work on engineering a new class of efficient quantum tunneling based light emitters in the visible and UV wavelength ranges using nanometer scale engineering of semiconductor heterostructures and electron transport. We gratefully acknowledge support from ONR, AFOSR, DARPA, NSF, DOE, DTRA, Texas Instruments, Raytheon IDS, and Northrop Grumman.
Bio: Siddharth Rajan is Professor of Electrical and Computer Engineering and Materials Science and Engineering at The Ohio State University, where he joined the faculty in 2008. He received his PhD in Electrical and Computer Engineering in 2006 from University of California, Santa Barbara, and has held research positions in UC Santa Barbara and GE Global Research, NY. His research interests include high performance semiconductor devices, molecular beam epitaxy, and heterostructure engineering. He has co-authored over 120 journal papers and 5 patents in these areas of research.
Host: Prof. Charles Ahn
Wednesday, October 31, 2018
2:30 – 3:30 pm
Mason 107
Refreshments served at 2:15 pm