Tso-Ping Ma

Raymond John Wean Professor of Electrical Engineering & Applied Physics
Room / Office: Becton 319
Office Address:
15 Prospect Street
New Haven, CT 06511
Mailing Address:
P.O. Box 208284
New Haven, CT 06520
Phone: (203) 432-4211
Email: t.ma@yale.edu

Ph.D., Yale University


Ma’s research group revolves around the scientific and technological issues related to semiconductor devices, especially those involving MIS (Metal-Insulator-Semiconductor) systems. It overlaps a number of areas in materials synthesis and device physics. Most of Professor Ma’s graduate students and research staff collaborate with a number of universities and major semiconductor companies in the United States and abroad. 

Prof. Ma's current research projects (short description of all projects):
  • Advanced Gate Dielectrics
  • Flash Memory Devices
  • MIS Devices Based on InGaAs, SiC, GaN, and SiGe
  • Inelastic Electron Tunneling Spectroscopy (IETS) of Ultra-Thin Dielectrics
  • Ferroelectric Thin Films for Memory Technology
  • Unipolar CMOS Technology

Selected Awards & Honors:

  • Elected to the Chinese Academy of Science as a Foreign Member (2009)
  • Connecticut Medal of Technology (2008)
  • SIA University Researcher's Award  (2006)
  • IEEE Andrew S. Grove Award  (2005)
  • Pan Wen-Yuan Award  (2005)
  • Elected to the National Academy of Engineering  (2003)
  • B.F. Goodrich National Collegiate Inventor's Advisor Award  (1998)
  • Paul Rappaport Award, IEEE Electron Device Society  (1998)
  • B.F. Goodrich National Collegiate Inventor's Advisor Award  (1993)
  • Connecticut Yankee Ingenuity Award  (1991)
  • Harding Bliss Prize, Yale University  (1975)
  • Connecticut Academy of Science and Engineering 
  • Fellow of the Institute of Electrical and Electronic Engineers (IEEE) 
  • Honorary Professor of Chinese Academy of Sciences
  • Honorary Professor of Tianjin University
  • Honorary Professor of Tsinghua University
  • Honorary Guest Professor of Peking University
  • Advisory Professor of Fudan University
  • Life member of American Physical Society 

Selected Publications:

  • Electrical Characterization of High-k Gate Dielectrics on Semiconductors, Tso-Ping Ma, 2008,  Applied Surface Science, 255(3), 672-675.
  • Mobility Measurement and Degradation Mechanisms of MOSFETs Made with Ultra-Thin High-k Dielectrics, Tso-Ping Ma, 2004, IEEE Trans. Electron Devices, 51(1), 98-105.
  • Inelastic Electron Tunneling Spectroscopy Study of Ultra-thin HfO2 and HfAlO, Tso-Ping Ma, 2003, Appl. Phys. Lett., 83(13), 2605.
  • High Temperature (450 C) Reliable NMISFETs on P-type 6H-SiC, X. Wang, Tso-Ping Ma, et al, 1999, Tech. Digest of Int. Elect. Dev. Meeting, paper 8.7.
  • Making Silicon Nitride Film a Viable Gate Dielectric, Tso-Ping Ma, 1998, IEEE Trans. Electron Devices, 45, 680.

Selected Patents:

  • "A Ferroelectric Dynamic Random Access Memory", 6,067,244, 2000: With Jin-Ping Han.
  • "Isotopically Enriched Semiconductor Devices", 5,144,409, Sept.1, 1992.
  • "Isotopically Enriched Semiconductor Devices", 5442,191, 1995.
  • “A Novel Complementary Field-Effect Transistor Technology”, filed in 2009; Patent pending: With Minjoo Larry Lee.


  • Co-Director of the Yale Center for Microelectronic Materials and Structures
  • Co-Director of the Yale-Peking Joint Center for Microelectronics and Nanotechnology
  • Member, International Affairs Advisory Group