Jung Han

Professor of Electrical Engineering
Room / Office: Becton 517
Office Address:
15 Prospect Street
New Haven, CT 06511
Mailing Address:
P.O. Box 208284
New Haven, CT 06520
Phone: (203) 432-7567
Email: jung.han@yale.edu
Degrees:

Ph.D., Purdue University

Interests:

Wide bandgap semiconductor materials, optoelectronic and microelectronic devices, nanoscale materials and devices, semiconductor epitaxy, hybrid organic-inorganic semiconductors.

Selected Publications:

  • Y. Zhang, B. Leung, and J. Han; "A liftoff process of GaN layers and devices through nanoporous transformation", Applied Physics Letters, 100, 181908 (2012)
  • D. Chen, and J. Han; "High reflectance membrane-based distributed Bragg relectors for GaN photonics", Applied Physics Letters, 101, 221104 (2012)
  • B. Leung, Q. Sun, C. D. Yerino, J. Han, and M. E. Coltrin; "Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy", Semiconductor Science and Technology, 27, 024005 (2012)
  • C. Dang, J. Lee, Y, Zhang, J. Han, C. Breen, J. S. Steckel, S. Coe-Sullivan, and A. Nurmikko; "A wafer-level integrated white-light-emitting diode incorporating colloidal quantum dots as a nanocomposite luminescent material", Advanced Materials, 24, 5915-5918 (2012)
  • B.-H. Kong, Q. Sun, J. Han, I.-H. Lee, H.-K. Cho, "Classification of stacking faults and dislocations observed in nonpolar a-plane GaN epilayers using transmission electron microscopy", Applied Surface Science, 258, 2522 (2012)
  • B. Leung, J. Song, Y. Zhang, and J. Han; "Evolutionary selection growth: towards template insensitive preparation of single crystal layers", Advanced Materials, 25, 1285 (2013) - Featured on issue cover page
  • M. J. Schwab, D. Chen, J. Han, and L. D. Pfefferle, Aligned Mesopore Arrays in GaN by Anodic Etching and Photoelectrochemical Surface Etching, J. Phys Chem C 117, 16890 (2013)